在室温(RT)下,采用直流(DC)磁控溅射在聚碳酸酯(PC)衬底上制备Ga掺杂ZnO(GZO)薄膜.通过X射线衍射(XRD)与基片曲率方法研究薄膜的残余应力.提出并讨论了厚度和溅射功率对GZO薄膜的应力影响并证实所有薄膜的应力均是压缩应力.研究表明随着薄膜厚度的增加,外应力可以得到充分释放.而溅射功率的变化可以改变GZO薄膜的应力和晶粒尺寸.研究表明溅射功率在140W的条件下制备的厚度225nm薄膜具有最大的晶粒尺寸和最小的压缩应力.结果表明改变溅射参数,比如溅射功率和薄膜厚度,GZO薄膜能够有效地释放应力.
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